Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

Nanoscale Research Letters

Dong-Sing Wuu¹  Yen-Wei Yeh²  Po-Tsung Lee²  Tsung-Chi Hsu²  Hao-Chung Kuo³  Shouqiang Lai⁴  Su-Hui Lin⁴  Tingzhu Wu⁴  Zhong Chen⁴  Shui-Yang Lien⁵  Guisen Li⁶ 

[1] Department of Materials Science and Engineering, National Chung Hsing University, 40227, Taichung, Taiwan;Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, 30010, Hsinchu, Taiwan;Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, 30010, Hsinchu, Taiwan;Semiconductor Research Center, Hon Hai Research Institute, 11492, Taipei, Taiwan;Fujian Engineering Research Center for Solid-State Lighting, Xiamen University National Integrated Circuit Industry and Education Integration Innovation Platform, School of Electronic Science and Engineering, Xiamen University, 361005, Xiamen, China;School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, 361024, Xiamen, China;Unicompound Semiconductor Corporation, 351117, Putian, China;

关键词: ALD;    Micro-LED;    Passivation;    VCSEL;    Reliability;   

DOI  :  10.1186/s11671-021-03623-x

来源: Springer

【 摘 要 】

In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability.

【 授权许可】

CC BY