The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Nanoscale Research Letters

Yixuan Huang¹  Caihong Li¹  Wen Du¹  Hao Xu²  Zhengang Zhai³  Guifu Zou⁴  Juntong Zhu⁴ 

[1] Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 610054, Chengdu, People’s Republic of China;School of Physics, University of Electronic Science and Technology of China, 610054, Chengdu, People’s Republic of China;the State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, People’s Republic of China;the 36th Research Institute of China Electronics Technology Group Corporation, 314033, Jiaxing, People’s Republic of China;the College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 215006, Suzhou, People’s Republic of China;

关键词: Lateral monolayer heterostructure;    MoS/WS heterojunction;    Photodetector;    Sharp interface;   

DOI  :  10.1186/s11671-021-03581-4

来源: Springer

【 摘 要 】

Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

【 授权许可】

CC BY