A new route for caesium lead halide perovskite deposition

Journal of the European Optical Society-Rapid Publications

Paolo Scardi¹  Giammarco Roini²  Francesco Biccari³  Naomi Falsini³  Anna Vinattieri⁴  Andrea Ristori⁵  Nicola Calisi⁶  Stefano Caporali⁶ 

[1] Department of Civil, Environmental and Mechanical Engineering, University of Trento, via Mesiano 77, I-38123, Trento, Italy;Department of Information Engineering, University of Brescia, via Branze 38, I-25123, Brescia, Italy;Department of Physics and Astronomy, University of Florence, via G. Sansone 1, I-50019, Sesto Fiorentino, Italy;European Laboratory for Non-Linear Spectroscopy - LENS, via Nello Carrara 1, I-50019, Sesto Fiorentino, Italy;Department of Physics and Astronomy, University of Florence, via G. Sansone 1, I-50019, Sesto Fiorentino, Italy;European Laboratory for Non-Linear Spectroscopy - LENS, via Nello Carrara 1, I-50019, Sesto Fiorentino, Italy;INFN-Firenze, via G. Sansone 1, I-50019, Sesto Fiorentino, Italy;European Laboratory for Non-Linear Spectroscopy - LENS, via Nello Carrara 1, I-50019, Sesto Fiorentino, Italy;Industrial Engineering Department, University of Florence, via S. Marta 3, I-50139, Florence, Italy;Interuniversity National Consortium for Material Science and Technology - INSTM, via Giusti 9, I-50121, Florence, Italy;

关键词: Perovskites;    Time resolved spectroscopy;    Photoluminescence;    Sputtering;    Films;   

DOI  :  10.1186/s41476-021-00153-y

来源: Springer

【 摘 要 】

Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of CsPbBr3 and CsPbCl3 has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural and optical characteristics of the two materials obtained with this deposition technique. A detailed photoluminescence (PL) spectroscopy study of the as-grown samples was conducted at the macro and micro scale in a wide temperature range (10-300 K) to fully characterize the PL on sample areas of square centimeters, to assess the origin of the inhomogeneous broadening and to quantify the PL quantum yield quenching. Our results prove that this technique allows for the realization of high quality nanometric films with controlled thickness of relevance for optoelectronic applications.

【 授权许可】

CC BY