State of the art of metal oxide memristor devices

Nanotechnology Reviews

article

Baker Mohammad¹  Maguy Abi Jaoude¹  Vikas Kumar¹  Dirar Mohammad Al Homouz¹  Heba Abu Nahla¹  Mahmoud Al-Qutayri¹  Nicolas Christoforou¹ 

[1]Khalifa University of Science Technology and Research

关键词: memory technology;    memristor;    RRAM;    thin film;   

DOI  :  10.1515/ntrev-2015-0029

学科分类：社会科学、人文和艺术（综合）

来源: De Gruyter

【 摘 要 】

Memristors are one of the emerging technologies that can potentially replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. Over the past few years, research and development mostly focused on revolutionizing the metal oxide materials, which are used as core components of the popular metal-insulator-metal memristors owing to their highly recognized resistive switching behavior. This paper outlines the recent advancements and characteristics of such memristive devices, with a special focus on (i) their established resistive switching mechanisms and (ii) the key challenges associated with their fabrication processes including the impeding criteria of material adaptation for the electrode, capping, and insulator component layers. Potential applications and an outlook into future development of metal oxide memristive devices are also outlined.

【 授权许可】

CC BY