Semiconductor-enhanced Raman scattering sensors via quasi-three-dimensional Au/Si/Au structures

Nanophotonics

article

Guiqiang Liu¹  Yi Liu¹  Li Tang¹  Xiaoshan Liu¹  Guolan Fu¹  Zhengqi Liu² 

[1] College of Physics Communication and Electronics, Jiangxi Normal University;Jiangxi Key Laboratory of Nanomaterials and Sensors, Provincial Key Laboratory of Optoelectronic and Telecommunication, College of Physics Communication and Electronics, Jiangxi Normal University

关键词: hot spots;    plasmonics;    quasi-three-dimensional;    semiconductor;    surface-enhanced Raman scattering;   

DOI  :  10.1515/nanoph-2019-0078

学科分类：社会科学、人文和艺术（综合）

来源: De Gruyter

【 摘 要 】

We present a feasible way to strongly enhance Raman signals via introducing an ultra-thin dielectric film in the dual-layer plasmonic hotspots structure, which forms a quasi-three-dimensional structure. The Raman intensity was obtained with an enhancement factor of 735% for the dual-layer metal structure buffered with an ultra-thin silicon film. Moreover, the silicon layer based surface-enhanced Raman scattering (SERS) substrate provided a Raman signal two to five times larger than that of the silica buffered substrate. These distinct responses confirm that the ultra-thin high-index semiconductor film has the capability of additionally enhancing Raman scattering. Otherwise, the upper and lower metal clusters can support multiple kinds of plasmonic resonances, which produce a remarkable physical enhancement of the Raman signals. Besides these impressive optical properties, the substrates have prominent advantages on structural features, since the fabrication process can be fulfilled simply, suggesting a feasible way for a large-area and low-cost SERS platform. The findings may pave an avenue to achieve insights on the dielectric enhanced Raman scattering and hold potential applications in optoelectronics, such as environmental and health sensors.

【 授权许可】

CC BY