Gate-tunable metafilm absorber based on indium silicon oxide

Nanophotonics

article

Hongwei Zhao¹  Jonathan Klamkin¹  Ran Zhang²  Hamid T. Chorsi¹  Wesley A. Britton²  Yuyao Chen³  Prasad P. Iyer¹  Jon A. Schuller¹  Luca Dal Negro² 

[1] Electrical and Computer Engineering Department, University of California;Division of Material Science and Engineering, Boston University;Department of Electrical and Computer Engineering and Photonics Center, Boston University;Department of Physics, Boston University

关键词: metafilm;    indium silicon oxide;    metamaterials;    metasurface;   

DOI  :  10.1515/nanoph-2019-0190

学科分类：社会科学、人文和艺术（综合）

来源: De Gruyter

【 摘 要 】

In this work, reconfigurable metafilm absorbers based on indium silicon oxide (ISO) were investigated. The metafilm absorbers consist of nanoscale metallic resonator arrays on metal-insulator-metal (MIM) multilayer structures. The ISO was used as an active tunable layer embedded in the MIM cavities. The tunable metafilm absorbers with ISO were then fabricated and characterized. A maximum change in the reflectance of 57% and up to 620 nm shift in the resonance wavelength were measured.

【 授权许可】

CC BY