Broadband nonlinear optical response in GeSe nanoplates and its applications in all-optical diode

Nanophotonics

article

Jie Tang¹  Feng Zhang¹  Feng Zhou¹  Xian Tang²  Xiaoyu Dai¹  Shunbin Lu¹ 

[1] International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics (IMO), Engineering Technology Research Center for 2D Material Information Function Devices Systems of Guangdong Province, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University;School of Physics and Optoelectronic Engineering, Foshan University

关键词: germanium selenide;    saturable absorption;    optical diode;   

DOI  :  10.1515/nanoph-2019-0531

学科分类：社会科学、人文和艺术（综合）

来源: De Gruyter

【 摘 要 】

Germanium selenide nanoplates (GeSe NPs) are considered to have broadband nonlinear optical (NLO) properties and great potential for applications in nanophotonic devices. In this work, we systematically studied the NLO response of GeSe NPs by the open-aperture Z-scan technique. GeSe NPs exhibit strong saturable absorption at wavelengths of 400, 800, and 1064 nm with different pulse durations. Furthermore, we investigated the excited carrier dynamics of GeSe NPs by the non-degenerate pump-probe technique. The fast and slow relaxation times at different wavelengths of 800, 871, 1064, and 1100 nm were components with lifetimes of about 0.54–1.08 and 52.4–167.2 ps, respectively. The significant ultrafast NLO properties of GeSe NPs imply their potential in the development of nanophotonic devices. Here, we designed and fabricated the all-optical diode by means of the GeSe/C 60 tandem structure and demonstrated that the saturable absorption behavior of GeSe NPs can be used to fabricate a photonic diode, which exhibits nonreciprocal transmission of light similar to that of an electron diode.

【 授权许可】

CC BY