Quantum confinement-induced enhanced nonlinearity and carrier lifetime modulation in two-dimensional tin sulfide

Nanophotonics

article

Feng Zhang¹  Shixiang Xu²  Han Zhang¹  Ning Xu¹  Jinlai Zhao¹  Yunzheng Wang¹  Xiantao Jiang¹  Ye Zhang¹  Weichun Huang³  Lanping Hu³  Yanfeng Tang³ 

[1] Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University;College of Physics and Optoelectronic Engineering, Shenzhen University;College of Chemistry and Chemical Engineering, Nantong University

关键词: third-order nonlinearity;    quantum-confinement;    carrier dynamics;    two-dimensional;    tin sulfide (SnS);   

DOI  :  10.1515/nanoph-2019-0448

学科分类：社会科学、人文和艺术（综合）

来源: De Gruyter

【 摘 要 】

Two-dimensional tin sulfide (SnS), as a black phosphorus-analogue binary semiconductor, has received considerable attention in photonics and optoelectronics. Herein, the third-order nonlinearity susceptibility Im χ 3 is enhanced from  −(6.88 ± 0.10) × 10 −14 esu to  −(15.90 ± 0.27) × 10 −14 esu by the size-related quantum confinement in layered SnS nanosheets. Due to the energy level alignment, a phonon-bottleneck effect is observed, which leads to a prolonged carrier lifetime. These results provide a platform for actively tuning the linear and nonlinear optics, and pave the way for designing SnS-based tunable and anisotropic optoelectronic devices.

【 授权许可】

CC BY