Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

Nanophotonics

article

Hao Jiang¹  Yang Liu³  Haofei Shi²  Xingzhan Wei²  Changbin Nie²  Jintao Fu²  Linlong Tang²  Jun Shen²  Feiying Sun²  Jiuxun Sun¹  Meng zhu⁴  Shuanglong Feng² 

[1] School of Physics, University of Electronic Science and Technology of China;Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences;Department of Physics, Harbin Institute of Technology;TianJin Jinhang Insitute of Technical Physics

关键词: graphene;    manipulation;    photodetector;    photogating effect;    silicon-on-insulator;   

DOI  :  10.1515/nanoph-2020-0261

学科分类：社会科学、人文和艺术（综合）

来源: De Gruyter

【 摘 要 】

The hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity. However, the responsivity (or gain) was increased at the expense of response time. In this paper, we devise a mechanism which can obtain an enhanced responsivity and fast response time simultaneously by manipulating the photogating effect (MPE). This concept is demonstrated by using a graphene/silicon-on-insulator (GSOI) hybrid structure. An ultrahigh responsivity of more than 10 7  A/W and a fast response time of 90 µs were obtained. The specific detectivity D * was measured to be 1.46 ⨯ 10 13  Jones at a wavelength of 532 nm. The Silvaco TCAD modeling was carried out to explain the manipulation effect, which was further verified by the GSOI devices with different doping levels of graphene in the experiment. The proposed mechanism provides excellent guidance for modulating carrier distribution and transport, representing a new route to improve the performance of graphene/semiconductor hybrid photodetectors.

【 授权许可】

CC BY