Boron nitride for excitonics, nano photonics, and quantum technologies

Nanophotonics

article

Bernard Gil¹  Guillaume Cassabois¹  Ramon Cusco²  Giorgia Fugallo³  Lluis Artus² 

[1] Laboratoire Charles Coulomb (L2C), UMR 5221-CNRS-Université de Montpellier;Institut Jaume Almera (ICTJA-CSIC);Laboratorie de Thermique et Energie de Nantes (LTeN) Polytech’Nantes, Université de Nantes

关键词: 2D materials;    boron nitride;    deep ultra violet emission;    quantem technologies;    single photon sources;    wide band gap semiconductor;   

DOI  :  10.1515/nanoph-2020-0225

学科分类：社会科学、人文和艺术（综合）

来源: De Gruyter

【 摘 要 】

We review the recent progress regarding the physics and applications of boron nitride bulk crystals and its epitaxial layers in various fields. First, we highlight its importance from optoelectronics side, for simple devices operating in the deep ultraviolet, in view of sanitary applications. Emphasis will be directed towards the unusually strong efficiency of the exciton–phonon coupling in this indirect band gap semiconductor. Second, we shift towards nanophotonics, for the management of hyper-magnification and of medical imaging. Here, advantage is taken of the efficient coupling of the electromagnetic field with some of its phonons, those interacting with light at 12 and 6 µm in vacuum. Third, we present the different defects that are currently studied for their propensity to behave as single photon emitters, in the perspective to help them becoming challengers of the NV centres in diamond or of the double vacancy in silicon carbide in the field of modern and developing quantum technologies.

【 授权许可】

CC BY