10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides

Frontiers in Physics

Hideo Arimoto¹  Kapil Debnath²  Moïse Sotto³  Kian Kiang³  Muhammad K. Husain³  James Byers³  Joseph Hillier³  Shinichi Saito³  Martin Charlton³  David J. Thomson⁴  Graham T. Reed⁴ 

[1] Center for Technology Innovation-Electronics, Research and Development Group Hitachi, Ltd., Tokyo, Japan;Department of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, India;Department of Electronics and Computer Science, University of Southampton, Southampton, United Kingdom;Optoelectronics Research Center, University of Southampton, Southampton, United Kingdom;

关键词: silicon photonics;    slot-mode;    polarization conversion;    misaligned photonic crystal;    double-SOI;    anisotropic wet etching;   

DOI  :  10.3389/fphy.2021.659585

来源: Frontiers

【 摘 要 】

In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transverse-magnetic (TM) polarization slot-mode. Finite difference time domain (FDTD) simulations indicate that the TE mode couples to the robust TM mode inside the Brillouin zone. Broadband transmission data shows propagation identified with horizontal-slot TM mode within the TE bandgap for fully mismatched fabricated devices. This simultaneously demonstrates TE to TM mode conversion, and the narrowest Si photonics SiO2 slot-mode propagation reported in the literature (10 nm wide slot), which both have many potential telecommunication applications.

【 授权许可】

CC BY