Frontiers in Physics | |
10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides | |
Hideo Arimoto1  Kapil Debnath2  Moïse Sotto3  Kian Kiang3  Muhammad K. Husain3  James Byers3  Joseph Hillier3  Shinichi Saito3  Martin Charlton3  David J. Thomson4  Graham T. Reed4  | |
[1] Center for Technology Innovation-Electronics, Research and Development Group Hitachi, Ltd., Tokyo, Japan;Department of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, India;Department of Electronics and Computer Science, University of Southampton, Southampton, United Kingdom;Optoelectronics Research Center, University of Southampton, Southampton, United Kingdom; | |
关键词: silicon photonics; slot-mode; polarization conversion; misaligned photonic crystal; double-SOI; anisotropic wet etching; | |
DOI : 10.3389/fphy.2021.659585 | |
来源: Frontiers | |
【 摘 要 】
In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transverse-magnetic (TM) polarization slot-mode. Finite difference time domain (FDTD) simulations indicate that the TE mode couples to the robust TM mode inside the Brillouin zone. Broadband transmission data shows propagation identified with horizontal-slot TM mode within the TE bandgap for fully mismatched fabricated devices. This simultaneously demonstrates TE to TM mode conversion, and the narrowest Si photonics SiO2 slot-mode propagation reported in the literature (10 nm wide slot), which both have many potential telecommunication applications.
【 授权许可】
CC BY
【 预 览 】
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RO202107127860635ZK.pdf | 4599KB | download |