Titanium oxide vertical resistive random-access memory device

Micro & nano letters

article

David M. Fryauf¹  Kate J. Norris¹  Junce Zhang¹  Shih-Yuan Wang¹  Nobuhiko P. Kobayashi¹ 

[1] Electrical Engineering Department, University of California;Nanostructured Energy Conversion Technology and Research (NECTAR) group at the Advanced Studies Laboratory, UC Santa Cruz – NASA Ames Research Center

关键词: platinum;    titanium compounds;    semiconductor materials;    metal-semiconductor-metal structures;    resistive RAM;    photolithography;    electron beam deposition;    vacuum deposition;    atomic layer deposition;    electrical resistivity;    scanning electron microscopy;    transmission electron microscopy;    vertical resistive random-access memory switching devices;    vertical three-dimensional structure;    photolithography;    electron-beam evaporation;    electrodes;    atomic layer deposition;    dielectric layers;    active switching cross-sectional area;    nanosized devices;    structural integrity;    electrical characteristics;    cross-sectional scanning electron microscopy;    transmission electron microscopy;    current-voltage characteristics;    Pt-TiO2-Pt;   

DOI  :  10.1049/mnl.2015.0021

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Pt/TiO2/Pt vertical resistive random-access memory switching devices were fabricated in a vertical three-dimensional structure by combining conventional photolithography, electron-beam evaporation for electrodes and atomic layer deposition for dielectric layers. The active switching cross-sectional area was ∼0.02 µm2 , which is comparable to nanosized devices that require more elaborative fabrication processes. Structural integrity and electrical characteristics of the vertical memory device were analysed by cross-sectional scanning, transmission electron microscopy and current–voltage characteristics.

【 授权许可】

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