Proposal of a ferroelectric multi-bit memory structure for reliable operation at sub-100 nm scale

Micro & nano letters

article

Woo Young Kim¹  Hee Chul Lee² 

[1] Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST);Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)

关键词: ferroelectric materials;    ferroelectric storage;    ferroelectric multi-bit memory structure;    ferroelectric materials;    spontaneous polarisation;    integration density;    ferroelectric multi-bit memory devices;    electric field distribution;    ferroelectric polymer;   

DOI  :  10.1049/mnl.2015.0217

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Atrial fibrillation is very common cardiac arrythmia which is encountered during the perioperative period. Atrial fibrillation in perioperative period may lead to hemodynamic impairment and thromboembolic events resulting into significant morbidity and mortality. So it is very crucial for an anesthesiologist to maintain the hemodynamic stability of the patient with atrial fibrillation and prevent furthur complications associated with it. Here we report a case of forty year old female patient  posted for emergency exploratory laparotomy for perforation peritonitis with pre-existing atrial fibrillation.

【 授权许可】

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