期刊论文详细信息
Micro & nano letters
Effective approach to enhance DC and high-frequency performance of electrically doped TFET
article
Shivendra Yadav1  Alemienla Lemtur1  Dheeraj Sharma1  Mohd. Aslam1  Deepak Soni1 
[1] Nanoelectronics and VLSI Lab, Electronics and Communication Engineering Department, Indian Institute of Information Technology
关键词: semiconductor doping;    tunnel transistors;    semiconductor device models;    field effect transistors;    work function;    dopingless TFET;    tunnel field-effect transistor;    electrical doping;    low work-function strip electrically doped TFET;    DC/radio-frequency performance;   
DOI  :  10.1049/mnl.2018.5072
学科分类:计算机科学(综合)
来源: Wiley
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【 摘 要 】

The objective of the study to develop an amorphous solid dispersion for poorly soluble raltegravir by hot melt extrusion (HME) technique. A novel solubility improving agent plasdone  s630 was utilized. The HME raltegravir was formulated into tablet by direct compression method. The prepared tablets were assessed for all pre and post-compression parameters. The drug- excipients interaction was examined by FTIR and DSC. All formulas displayed complying with pharmacopoeial measures. The study reveals that formula prepared by utilizing drug and plasdone S630 at 1:1.5 proportion and span 20 at concentration about 30mg (trail-6) has given highest dissolution rate than contrasted with various formulas of raltegravir.

【 授权许可】

CC BY|CC BY-ND|CC BY-NC|CC BY-NC-ND   

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