【 摘 要 】
The N-doped n-type 6H-SiC (silicon carbide) nanowires (NWs) were synthesised via an electrospinning fibre carbothermal method by employing ammonia as a dopant. The structure characterisations reveal that the as-synthesised 6H-SiC NWs have a hexagonal structure. The nano-field-effect transistors based on individual N-doped 6H-SiC NWs were constructed, and the electrical measurements indicated that the N-doped 6H-SiC NWs have n-type semiconductors properties with a high carrier concentration of 2.1 × 10 19 cm −3 and a low resistivity of 0.1 Ω cm. The field emission characterisations of N-doped 6H-SiC NWs demonstrate that the turn-on electric field ( E to ) is 7.6 Vμm −1 , and the threshold electric field ( E th ) is 8.5 Vμm −1 . The as-synthesised N-doped 6H-SiC NWs with enhanced n-type conductivity will be a very attractive candidate for nanoelectronics devices in the future.
【 授权许可】
CC BY|CC BY-ND|CC BY-NC|CC BY-NC-ND
【 预 览 】
Files | Size | Format | View |
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RO202107100002724ZK.pdf | 303KB | download |