Thin-film transistors based on wide bandgap Ga 2 O 3 films grown by aqueous-solution spin-coating method

Micro & nano letters

article

Dazheng Chen¹  Yu Xu¹  Zhiyuan An¹  Zhe Li¹  Chunfu Zhang¹ 

[1] Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University;Shaanxi Joint Key Laboratory of Graphene, Xidian University

关键词: wide band gap semiconductors;    annealing;    spin coating;    energy gap;    thin film transistors;    electron mobility;    semiconductor thin films;    semiconductor growth;    gallium compounds;    electrical conductivity;    surface morphology;    wide-bandgap semiconductor;    molecular-beam epitaxy;    thin-film transistors;    aqueous-solution spin-coating method;    wide bandgap Ga2O3 films;    ultraviolet optoelectronics;    high power electronics;    chemical vapour deposition;    electrical properties;    optical properties;    morphological properties;    post-deposition annealing;    n-type conductivity;    electron mobility;    Ga2O3;   

DOI  :  10.1049/mnl.2018.5825

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Ga 2 O 3 is a wide bandgap oxide semiconductor material with the bandgap value only second in magnitude to diamond among known semiconductors. As a wide-bandgap semiconductor, Ga 2 O 3 has emerged as a new competitor to silicon carbide and III-nitrides in various applications of ultraviolet optoelectronics and high power electronics. However, almost all the devices are based on the Ga 2 O 3 grown by molecular-beam epitaxy or chemical vapour deposition, which is time-consuming and expensive. In this work, the authors report on thin-film transistors based on wide bandgap Ga 2 O 3 films grown by aqueous-solution spin-coating method. The morphological, optical and electrical properties of the films and devices are investigated using a range of characterisation techniques, whilst the effects of post-deposition annealing are also investigated. Both as fabricated and post-annealed Ga 2 O 3 films are found to be very smooth and exhibit wide energy bandgaps of around 4.8 and 4.9 eV, respectively. Thin-film transistors based on the grown Ga 2 O 3 films show n-type conductivity with the maximum electron mobility of 0.1 cm 2 /Vs.

【 授权许可】

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