【 摘 要 】
The present work details the synthesis of cobalt quantum-dots (Co QDs) with size downscaling to 1–2 nm and their applications in non-volatile memory (NVM) devices. The process of colloidal synthesis is simple and provides the control over a wide range of QDs size. The scaled-down colloidal Co QDs are applied for the NVM device fabrication. Colloidal synthesised Co QDs are spin-coated over silicon dioxide wafer for the fabrication of floating-gate NVM devices. Capacitance–voltage ( C – V ) and capacitance–time ( C – t ) measurements of the fabricated NVM device indicate a low voltage operation of device. A sweep voltages as small as 1.2–4 V lead to a flat band voltage shift of 0.35–1.5 V, evidencing the low operating voltage and low power NVM applications. Further, retention characteristics show a robust retention by fabricated NVM device. In addition, C – V measurements are done for the several samples in order to study the process repeatability. The work also is compared with the other processes for the floating gate memory device.
【 授权许可】
CC BY|CC BY-ND|CC BY-NC|CC BY-NC-ND
【 预 览 】
Files | Size | Format | View |
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RO202107100002669ZK.pdf | 665KB | download |