期刊论文详细信息
Micro & nano letters
Scaling down of cobalt quantum-dots by colloidal route for non-volatile memory device application
article
Manoj Yadav1  Ravi Shankar R. Velampati3  Debaprasad Mandal4 
[1] Department of Electrical Engineering, Indian Institute of Technology Ropar;Department of Electronics Engineering, National Chiao Tung University;Semi-Conductor Laboratory, Department of Space;Department of Chemistry, Indian Institute of Technology
关键词: semiconductor quantum dots;    colloids;    silicon compounds;    random-access storage;    integrated circuit measurement;    low-power electronics;    cobalt;    SiO2;    Co;    voltage 0.35 V to 4.0 V;    size 1.0 nm to 2.0 nm;    retention characteristics;    C–t measurements;    capacitance–time measurements;    C–V measurements;    capacitance–voltage measurements;    floating-gate NVM device fabrication;    scaled-down colloidal cobalt QDs;    cobalt quantum-dot synthesis;    floating gate memory device;    low power NVM applications;    sweep voltages;    nonvolatile memory device application;    colloidal route;   
DOI  :  10.1049/mnl.2019.0148
学科分类:计算机科学(综合)
来源: Wiley
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【 摘 要 】

The present work details the synthesis of cobalt quantum-dots (Co QDs) with size downscaling to 1–2 nm and their applications in non-volatile memory (NVM) devices. The process of colloidal synthesis is simple and provides the control over a wide range of QDs size. The scaled-down colloidal Co QDs are applied for the NVM device fabrication. Colloidal synthesised Co QDs are spin-coated over silicon dioxide wafer for the fabrication of floating-gate NVM devices. Capacitance–voltage ( C – V ) and capacitance–time ( C – t ) measurements of the fabricated NVM device indicate a low voltage operation of device. A sweep voltages as small as 1.2–4 V lead to a flat band voltage shift of 0.35–1.5 V, evidencing the low operating voltage and low power NVM applications. Further, retention characteristics show a robust retention by fabricated NVM device. In addition, C – V measurements are done for the several samples in order to study the process repeatability. The work also is compared with the other processes for the floating gate memory device.

【 授权许可】

CC BY|CC BY-ND|CC BY-NC|CC BY-NC-ND   

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