Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain

Micro & nano letters

article

Debraj Chakraborty¹  Biswajit Maity²  Moumita Mukherjee³ 

[1] Pailan College of Management & Technology;Bengal Institute of Technology;Adamas University

关键词: semiconductor growth;    semiconductor heterojunctions;    wide band gap semiconductors;    III-V semiconductors;    buffer layers;    silicon;    aluminium compounds;    gallium compounds;    molecular beam epitaxial growth;    semiconductor epitaxial layers;    semiconductor diodes;    oscillators;    THz domain;    numerical analysis;    avalanche transit time devices;    type room temperature solid-state source;    epitaxial heterojunction layers;    III–V nitride molecular beam epitaxy;    aluminum nitride buffer layer;    heterostructure III–V Nitride MITATT oscillator;    MQDD model;    nano-ATT oscillator;    silicon 〈111〉substrate;    wafer DC testing;    heterojunction gallium nitride-aluminum gallium nitride MITATT diodes;    breakdown voltage;    breakdown efficiency;    temperature 293.0 K to 298.0 K;    voltage 27.0 V;    frequency 0.75 THz to 1.1 THz;    AlGaN-GaN;    Si;   

DOI  :  10.1049/mnl.2019.0167

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Numerical analysis followed by experimental investigations are done with heterostructure GaN/AlGaN single drift MIxed Tunnelling and Avalanche Transit Time (MITATT) devices grown on Si〈111〉 substrate, at around 1 THz. A generalised self-consistent, nonlinear Mixed Quantum Drift-Diffusion (MQDD) simulator is developed and used for designing p ++ -n − -n-n ++ type room temperature solid-state source within 0.75–1.1 THz regime. The epitaxial heterojunction layers are grown by III–V nitride molecular beam epitaxy which has enabled the realisation of GaN/AlGaN periodic structure on Si〈111〉 substrate with AlN buffer layer. For the first time, the realisation of heterostructure III–V Nitride MITATT oscillator at sub-mm wave/terahertz (THz) frequencies is done. The device is observed to oscillate at 1 THz with ∼4%. A comparison of MQDD model with experimental (On wafer DC testing) results for heterojunction GaN/AlGaN MITATT diodes shows generalised agreement in terms of breakdown voltage (∼27 V) and efficiency (∼4%). First experimental results of GaN/AlGaN heterostructure MITATT diode are reported and compared with the theoretical predictions obtained through MQDD model.

【 授权许可】

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