Multilevel non-volatile memory based on Al 2 O 3 /ZnO bilayer device

Micro & nano letters

article

Jagath Arya Lekshmi¹  Thulasiraman Nandha Kumar¹  Kochupurackal Jinesh² 

[1] Electronics and Electrical Engineering Department, University of Nottingham Malaysia;Department of Physics, Indian Institute of Space Science and Technology

关键词: silver;    nanoelectronics;    random-access storage;    zinc compounds;    alumina;    wide band gap semiconductors;    II-VI semiconductors;    tin compounds;    fluorine;    statistical distributions;    bipolar bi-layer nanodevice;    high resistance state;    low resistance state;    memory states;    RESET voltages;    SET voltages;    stable resistive levels;    device-to-device variability;    device characteristics;    resistance levels;    stable multilevel capability;    multilevel nonvolatile memory;    multilevel resistive switching characteristics;    switching mechanism;    conduction mechanism;    statistical distribution;    voltage 2.3 V;    voltage 3.0 V;    voltage 3.8 V;    voltage 0.8 V;    voltage 1.7 V;    size 10.0 nm;    size 5.0 nm;    resistance 3000 ohm;    resistance 100 ohm;    resistance 1300 ohm;    resistance 2700 ohm;    resistance 4320 ohm;    voltage -1.4 V;    Ag-Al2O3-ZnO;    SnO-F;   

DOI  :  10.1049/mnl.2020.0335

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

This Letter reports the multilevel resistive switching characteristics of bipolar bi-layer nanodevice made of Ag/Al 2 O 3 (10 nm)/ZnO (5 nm)/fluorine-doped tin oxide for the first time, exhibiting five distinguishable resistive states including both high resistance state (HRS) and low resistance state (LRS). Among five distinct memory states, three resistive states are attained with RESET voltages and two are attained with SET voltages. The distinguishable resistive levels obtained with RESET voltages 2.3, 3.0 and 3.8 V are 1300, 2700 and 4320 Ω, respectively, whereas two stable resistive levels attained with SET voltages 0.8 and 1.70 V are 3000 and 100 Ω, respectively. Moreover, the proposed device excels in its R off / R on ratio of 354 obtained with HRS/LRS at −1.4 V as well as the ratio of intermediate states IRS1, IRS2, IRS3 to HRS becomes 15, 04 and 27, respectively. Further, the conduction mechanism as well as the switching mechanism are demonstrated. Finally, the cycle-to-cycle as well as device-to-device variability in device characteristics and statistical distribution of their resistance levels are also analysed and report that devices in the sample are also exhibiting stable multilevel capability.

【 授权许可】

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