Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing

Journal of Advanced Ceramics

Yanling Wang¹  Jun Ouyang²  Jing Yan³  Chun-Ming Wang⁴ 

[1] Amperex Technology Limited, 352100, Ningde, China;Institute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Shandong Provincial Key Laboratory of Molecular Engineering, Qilu University of Technology (Shandong Academy of Sciences), 250353, Jinan, China;Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, 250061, Jinan, China;Institute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Shandong Provincial Key Laboratory of Molecular Engineering, Qilu University of Technology (Shandong Academy of Sciences), 250353, Jinan, China;College of Physics and Electronic Engineering, Qilu Normal University, 250013, Jinan, China;School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, China;

关键词: bismuth layer-structured ferroelectrics (BLSFs);    calcium bismuth niobate (CaBiNbO);    nanograin films;    rapid thermal annealing (RTA);    energy storage;    fatigue-resistance;   

DOI  :  10.1007/s40145-021-0464-3

来源: Springer

【 摘 要 】

CaBi2Nb2O9 thin film capacitors were fabricated on SrRuO3-buffered Pt(111)/Ti/Si(100) substrates by adopting a two-step fabrication process. This process combines a low-temperature sputtering deposition with a rapid thermal annealing (RTA) to inhibit the grain growth, for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis. By using this method, CaBi2Nb2O9 thin films with uniformly distributed nanograins were obtained, which display a large recyclable energy density Wrec ≈ 69 J/cm3 and a high energy efficiency η ≈ 82.4%. A superior fatigue-resistance (negligible energy performance degradation after 109 charge-discharge cycles) and a good thermal stability (from −170 to 150 °C) have also been achieved. This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.

【 授权许可】

CC BY