Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

Advanced Science

Lin Wang¹  Jiangfeng Du²  Maosen Guo²  Fazhan Shi²  Daoqian Zhu³  Biao Pan³  Mengxing Wang³  Wenlong Cai³  Houyi Cheng³  Tianrui Zhang³  Kaihua Cao⁴  Weisheng Zhao⁴  Shaoxin Li⁴  Xueying Zhang⁵ 

[1] Beihang‐Goertek Joint Microelectronics Institute, Qingdao Research Institute of Beihang University, Qingdao, 266000, China;Truth Instruments Co. Ltd., Qingdao, 266000, China;CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei, 230026, China;Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China;Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China;Beihang‐Goertek Joint Microelectronics Institute, Qingdao Research Institute of Beihang University, Qingdao, 266000, China;Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China;Beihang‐Goertek Joint Microelectronics Institute, Qingdao Research Institute of Beihang University, Qingdao, 266000, China;Truth Instruments Co. Ltd., Qingdao, 266000, China;

关键词: chiral spin vortices;    magnetic tunnel junctions;    memristors;    neuromorphic computing;    spintronics;   

DOI  :  10.1002/advs.202004645

来源: Wiley

【 授权许可】

CC BY