A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

Nanoscale Research Letters

Chen Chong¹  Haiwu Xie¹  Shupeng Chen¹  Tao Han¹  Hongxia Liu¹  Shulong Wang¹ 

[1] School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, 710071, Xi’an, China;

关键词: Tunnel FET;    Dopingless;    Fin-shaped channel;    Line tunneling junction;    Stack gate oxide;   

DOI  :  10.1186/s11671-020-03429-3

来源: Springer

【 摘 要 】

In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced. Through these methods, the DF-TFET with high on-state current, switching ratio of 12 orders of magnitude and no obvious ambipolar effect can be obtained. High κ material stack gate dielectric is induced to improve the off-state leakage, interface characteristics and the reliability of DF-TFET. Moreover, by using the dopingless channel and fin structure, the difficulties of doping process and asymmetric gate overlap formation can be resolved. As a result, the structure of DF-TFET can possess good manufacture applicability and remarkably reduce footprint. The physical mechanism of device and the effect of parameters on performance are studied in this work. Finally, on-state current (ION) of 58.8 μA/μm, minimum subthreshold swing of 2.8 mV/dec (SSmin), average subthreshold swing (SSavg) of 18.2 mV/dec can be obtained. With improved capacitance characteristics, cutoff frequency of 5.04 GHz and gain bandwidth product of 1.29 GHz can be obtained. With improved performance and robustness, DF-TFET can be a very attractive candidate for ultra-low-power applications.

【 授权许可】

CC BY