Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies

Nanoscale Research Letters

Mingming Yang¹  Yufan Liu¹  Hongli Wu¹  Xiaohui Zhao¹  Baolai Liang¹  Yafang Shi¹  Yi Liu¹  Longlong Wang¹  Xiaoli Li²  Xiaofen Qiao³ 

[1] Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, 071002, Baoding, People’s Republic of China;Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, 071002, Baoding, People’s Republic of China;State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, People’s Republic of China;State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, People’s Republic of China;

关键词: Defects;    Raman spectra;    Temperature dependence;    Thickness dependence;   

DOI  :  10.1186/s11671-020-03414-w

来源: Springer

【 摘 要 】

The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

【 授权许可】

CC BY