Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 2: SF6 / O2

Química Nova

G. F. Bauerfeldt¹  G. Arbilla¹ 

[1] ,Universidade Federal do Rio de Janeiro CT Instituto de QuímicaRio de Janeiro RJ

关键词: plasma etching;    numerical modeling;    SF6 decomposition;   

DOI  :  10.1590/S0100-40421998000100006

来源: SciELO

【 摘 要 】

In this work, a numerical modeling analysis of the gas-phase decomposition of SF6 / O2 mixtures, in the presence of silicon, was performed. The relative importance of individual processes and the effect of the parameters' uncertainties were determined. The model was compared with experimental data for the plasma etching of silicon and with the calculated results for the CF4 / O2 system. In both systems the main etching agent is the fluorine atom and the concentration of the major species depends on the composition of the mixture. The etching rate is greater for SF6 / O2.

【 授权许可】

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