Effects of Bias Voltage on Fen Films Prepared by Magnetron Sputtering

Materials Research

Yuqiao Zeng¹  Zheng Tan¹  Lichu Zhou¹  Meiya Jiang¹  Yuedong Qiu¹  Feng Fang¹  Haibo Huang¹  Xuhai Zhang¹  Jianqing Jiang¹ 

关键词: thin film;    iron nitride;    magnetic sputtering;    soft magnetic materials;    microstructural characterization;   

DOI  :  10.1590/1516-1439.334614

来源: SciELO

【 摘 要 】

Iron nitride films were deposited by radio frequency (RF) reactive magnetron sputtering at different bias voltages. It was found that the composition, structure and magnetic properties of the iron nitride films were strongly dependent on the depositing bias voltage. With a bias voltage of –50 V, the iron nitride film is fully dense and has a homogenous microstructure consisting of α-Fe and Fe16N2, leading to a unique combination of high Ms of 1645 emu/cc, Hc of 5 Oe and μi of 1573.

【 授权许可】

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