Materials Research | |
Modification of stearic acid in Ar and Ar-O2 pulsed DC discharge | |
Euclides Alexandre Bernardelli2  Thiago Souza2  Márcio Mafra1  Ana Maria Maliska2  Thierry Belmonte1  Aloisio Nelmo Klein2  | |
[1] ,Federal University of Santa CatarinaFlorianópolis SC ,Brazil | |
关键词: stearic acid; grafting; etching; cleaning by plasma; | |
DOI : 10.1590/S1516-14392011005000068 | |
来源: SciELO | |
【 摘 要 】
Stearic acid (CH3(CH2)16COOH) was treated with Ar and Ar-O2 (10%) pulsed DC discharges created by a cathode-anode confined system to elucidate the role of oxygen in plasma cleaning. The treatment time (5 to 120 minutes) and plasma gas mixture (Ar and Ar-O2) were varied, and the results showed that the mass variation of stearic acid after Ar-O2 plasma exposure was greater than that of pure Ar plasma treatment. Thus, compared to Ar*, active oxygen species (O and O2, in all states) enhance the etching process, regardless of their concentration. During the treatments, a liquid phase developed at the melting temperature of stearic acid, and differential thermal analyses showed that the formation of a liquid phase was associated with the breakage of bonds due to treatment with an Ar or Ar-O2 plasma. After treatment with Ar and Ar-O2 plasmas, the sample surface was significantly modified, especially when Ar-O2 was utilized. The role of oxygen in the treatment process is to break carbonaceous chains by forming oxidized products and/or to act as a barrier again ramification, which accelerates the etching of stearic acid.
【 授权许可】
CC BY
All the contents of this journal, except where otherwise noted, is licensed under a Creative Commons Attribution License
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