Crescimento de diamante dopado com Boro para eletrodos de uso em eletroquímica

Materials Research

Leide Lili Gonçalves Da Silva²  Evaldo José Corat²  Rita De Cássia Mendes De Barros²  Vladimir Jesus Trava-airoldi²  Nélia Ferreira Leite²  Koshun Iha¹ 

[1] ,Instituto Nacional de Pesquisas EspaciaisSão José dos Campos SP ,Brasil

关键词: diamond;    boron-doped;    chemical vapour deposition;    Raman spectroscopy;    scanning electron microscopy;   

DOI  :  10.1590/S1516-14391999000200010

来源: SciELO

【 摘 要 】

Boron-doped polycrystalline diamond films have been deposited over silicon substrate by hot-filament chemical-vapor-deposition process. A gas mixture of 0,5 vol. % methane and 1 vol. % methanol on hydrogen at a pressure of 50 Torr, have been used. Boric oxide dissolved in methanol have been used as the boron doping source during the diamond growth process.Raman spectroscopy and Scanning Electron Microscopy (SEM) have been performed on the samples. A change of Raman spectra with film doping was observed. The diamond characteristic line at 1333 cm-1 down shifted and its intensity decreased as the film resistivity decreased. On the other hand, a broad peak around 1220 cm-1 appeared and its intensity increased with decreasing film resistivity.No modifications on films morphology have been observed with different boron doping level. The grains were well-faceted with 2 mm average size

【 授权许可】

CC BY   
 All the contents of this journal, except where otherwise noted, is licensed under a Creative Commons Attribution License