Tungsten oxide thin films grown by thermal evaporation with high resistance to leaching

Journal of the Brazilian Chemical Society

Diogo S. Corrêa²  Julia C. O. Pazinato¹  Maurício A. De Freitas¹  Lucio S. Dorneles¹  Claudio Radtke¹  Irene T. S. Garcia¹ 

[1] ,Universidade Federal de Pelotas Centro de Ciências Químicas, Farmacêuticas e de Alimentos Pelotas RS ,Brazil

关键词: tungsten oxide;    thermal evaporation;    leaching resistance;    photocatalysis;   

DOI  :  10.5935/0103-5053.20140041

来源: SciELO

【 摘 要 】

Tungsten oxides show different stoichiometries, crystal lattices and morphologies. These characteristics are important mainly when they are used as photocatalysts. In this work tungsten oxide thin films were obtained by thermal evaporation on (100) silicon substrates covered with gold and heated at 350 and 600 ºC, with different deposition times. The stoichiometry of the films, morphology, crystal structure and resistance to leaching were characterized through X-ray photoelectron spectroscopy, micro-Raman spectroscopy, scanning and transmission electron microscopy, X-ray diffractometry, Rutherford backscattering spectrometry and O16(α,α')O16 resonant nuclear reaction. Films obtained at higher temperatures show well-defined spherical nanometric structure; they are composed of WO3.1 and the presence of hydrated tungsten oxide was also observed. The major crystal structure observed is the hexagonal. Thin films obtained through thermal evaporation present resistance to leaching in aqueous media and excellent performance as photocatalysts, evaluated through the degradation of the methyl orange dye.

【 授权许可】

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