Defeitos superficiais em 2H-WS2 observados por microscopia de tunelamento

Química Nova

F. Wypych²  Th. Weber¹  R. Prins¹ 

[1] ,Universidade Federal do ParanáCuritiba PR

关键词: scanning tunnelling microscopy;    tungsten disulphide;    catalysis;   

DOI  :  10.1590/S0100-40421998000100001

来源: SciELO

【 摘 要 】

Scanning tunnelling microscopy (STM) was used to characterise the basal surface of fresh cleaved crystals of 2H-WS2. Although no impurity or stacking faults could be detected by X-ray diffraction, STM images obtained with negative bias voltage showed two kinds of defects. These defects were attributed to an iodine derivative used as transport agent. In a flat surface free of defects, an image with atomic resolution was achieved with sulphur distances and angles as expected for hexagonal symmetry of 2H-WS2.

【 授权许可】

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