Gamma Radiation Dosimetry Using Tellurium Dioxide Thin Film Structures

Sensors

Khalil Arshak¹ 

[1] Electronic & Computer Engineering Dept., University of Limerick, Limerick, Ireland

关键词: Gamma Radiation;    Dosimetry;    Thin Films;    Tellurium Dioxide;    Optical Band Gap;   

DOI  :  10.3390/s20800347

来源: mdpi

【 摘 要 】

Thin films of Tellurium dioxide (TeO2) were investigated for γ-radiation dosimetry purposes. Samples were fabricated using thin film vapour deposition technique. Thin films of TeO2 were exposed to a 60Co γ-radiation source at a dose rate of 6 Gy/min at room temperature. Absorption spectra for TeO2 films were recorded and the values of the optical band gap and energies of the localized states for as-deposited and γ-irradiated samples were calculated. It was found that the optical band gap values were decreased as the radiation dose was increased. Samples with electrical contacts having a planar structure showed a linear increase in current values with the increase in radiation dose up to a certain dose level. The observed changes in both the optical and the electrical properties suggest that TeO2 thin film may be considered as an effective material for room temperature real time γ-radiation dosimetry.

【 授权许可】

CC BY   
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.