Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry

Sensors

Arno Förster¹  Jürgen Stock¹  Simone Montanari¹  Mihail Ion Lepsa² 

[1] Aachen University of Applied Sciences, Jülich Campus, Ginsterweg 1, D-52428 Jülich, Germany;Research Centre Jülich, Institute of Thin Films and Interfaces (ISG1), D-52425 Jülich, Germany

关键词: Gunn diode;    microwave generation;    GaAs hot electron injector;   

DOI  :  10.3390/S6040350

来源: mdpi

【 摘 要 】

GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.

【 授权许可】

Unknown   
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