High-temperature MEMS Heater Platforms: Long-term Performance of Metal and Semiconductor Heater Materials

Sensors

Jan Spannhake¹  Olaf Schulz¹  Andreas Helwig¹  Angelika Krenkow¹  Gerhard Müller¹ 

[1] Corporate Research Centre, EADS Deutschland GmbH, D-81663 München, Germany

关键词: Hotplate;    heater metallisation;    high-temperature stability;    electro-migration;    doped silicon;    doped metal oxide;    antimony doped tin oxide;   

DOI  :  10.3390/s6040405

来源: mdpi

【 摘 要 】

Micromachined thermal heater platforms offer low electrical power consumption and high modulation speed, i.e. properties which are advantageous for realizing non-dispersive infrared (NDIR) gas- and liquid monitoring systems. In this paper, we report on investigations on silicon-on-insulator (SOI) based infrared (IR) emitter devices heated by employing different kinds of metallic and semiconductor heater materials. Our results clearly reveal the superior high-temperature performance of semiconductor over metallic heater materials. Long-term stable emitter operation in the vicinity of 1300 K could be attained using heavily antimony-doped tin dioxide (SnO₂:Sb) heater elements.

【 授权许可】

Unknown   
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