Modeling of Photoinduced Deformation in Silicon Microcantilevers

Sensors

Yu-Lin Guo²  Jia Zhou¹  Yiping Huang² 

[1] ASIC and System National Key Lab, Department of Microelectronics, Fudan University, Shanghai 200433, P. R. China; E-mails

关键词: Photostriction;    microcantilever;    deformation;    silicon;   

DOI  :  10.3390/s7091713

来源: mdpi

【 摘 要 】

A model for prediction the photostriction effect in silicon microcantilevers is built up based on the fundamentals of mechanics and semiconductor physics. By considering the spatial distribution and surface recombination of photoinduced carriers in silicon, the model interprets the cause of the photoinduced bending. The results from our model much more closely approximate the experimental values than the former model built up by Datskos, Rajic and Datskou [1](APL, Vol.73 (1998) No.16, pp 3219-2321), represented by the reduction of the error between calculation and measurement from 25 times to 0.85 times.

【 授权许可】

Unknown   
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