Fabrication of a ZnO Pyroelectric Sensor

Sensors

Chun-Ching Hsiao¹  Kuo-Yi Huang² 

[1]Nano-Electro-Mechanical Systems Research Center, National Taiwan University, Taipei, Taiwan E-mail:

[2]Advanced Manufacturing Research Center, Department of Mechatronic Engineering, Huafan University, Taipei, Taiwan E-mail:

关键词: pyroelectric sensor;    thin film deposition;    ZnO;   

DOI  :  10.3390/s8010185

来源: mdpi

【 摘 要 】

This paper proposes a two-step radio frequency (RF) sputtering process to form a ZnO film for pyroelectric sensors. It is shown that the two-step sputtering process with a lower power step followed by a higher power step can significantly improve the voltage responsivity of the ZnO pyroelectric sensor. The improvement is attributed mainly to the formation of ZnO film with a strongly preferred orientation towards the c-axis. Furthermore, a nickel film deposited onto the uncovered parts of the ZnO film can effectively improve the voltage responsivity at higher modulating frequencies since the nickel film can enhance the incident energy absorption of the ZnO layer.

【 授权许可】

Unknown   
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