CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials

Sensors

Sung Pil Lee²  Ji Gong Lee¹ 

[1] Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106, USA;Department of Electronic Engineering, Kyungnam University, Masan, Kyungnam 631-701, Korea

关键词: Integrated sensors;    Humidity;    CMOS;    Carbon nitride film;   

DOI  :  10.3390/s8042662

来源: mdpi

【 摘 要 】

An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CN_x film on Si₃N₄/Si substrate, plasma etching is performed to the gate area as well as trenches. CN_x film is deposited by reactive RF magnetron sputtering method and patterned by the lift-off technique. The drain current is proportional to the dielectric constant, and the sensitivity is 2.8 μA/%RH.

【 授权许可】

Unknown   
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