The Image Transceiver Device: Studies of Improved Physical Design

Sensors

Yitzhak David¹ 

[1] Department of Electrical Engineering, Holon Institute of Technology, Holon, Israel; E-mail:

关键词: head-mounted display;    CMOS imager;    back illuminated APS;    crosstalk;    photo- activation;    Smart-Goggle;   

DOI  :  10.3390/s8074350

来源: mdpi

【 摘 要 】

The Image Transceiver Device (ITD) design is based on combining LCOS micro-display, image processing tools and back illuminated APS imager in single CMOS chip [1]. The device is under development for Head-Mounted Display applications in augmented and virtual reality systems. The main issues with the present design are a high crosstalk of the backside imager and the need to shield the pixel circuitry from the photo- charges generated in the silicon substrate. In this publication we present a modified, “deep p-well” ITD pixel design, which provides a significantly reduced crosstalk level, as well as an effective shielding of photo-charges for the pixel circuitry. The simulation performed using Silvaco software [ATLAS Silicon Device Simulator, Ray Trace and Light Absorption programs, Silvaco International, 1998] shows that the new approach provides high photo response and allows increasing the optimal thickness of the die over and above the 10-15 micrometers commonly used for back illuminated imaging devices, thereby improving its mechanical ruggedness following the thinning process and also providing a more efficient absorption of the long wavelength photons. The proposed deep p-well pixel structure is also a technology solution for the fabrication of high performance back illuminated CMOS image sensors.

【 授权许可】

CC BY   
© 2008 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.