A High Isolation Series-Shunt RF MEMS Switch

Sensors

Yuan-Wei Yu³  Jian Zhu¹  Shi-Xing Jia² 

[1]National Key Lab. of Monolithic Integrated Circuits and Modules, Nanjing, 210016, China

[2]Nanjing Electronic Devices Institute, Nanjing, China

[3] E-Mails:

[4]Department of Physics, Nanjing University, Nanjing, 210093, China

[5] E-Mail:

关键词: series-shunt;    RF MEMS switch;    metal-contact;    electrical model;   

DOI  :  10.3390/s90604455

来源: mdpi

【 摘 要 】

This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 μs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm.

【 授权许可】

CC BY   
© 2009 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.