Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

Sensors

Tarek Ben Salah²  Sofiane Khachroumi¹ 

[1] Electrical System Laboratory, UR03ES05, ENIT, Tunis, BP 37, le Belvédère, 1002 Tunis, Tunisia; E-Mail:;Ampere, CNRS UMR 5005, INSA de Lyon, bâtiment Léonard de Vinci, 69621 Villeurbanne, France; E-Mail:

关键词: silicon carbide;    SiC-JFET sensor;    modelling;    design parameters;   

DOI  :  10.3390/s100100388

来源: mdpi

【 摘 要 】

Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon), permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET) as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned.

【 授权许可】

CC BY   
©2010 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.