| Micromachines | |
| Self-Assembled Three-Dimensional Non-Volatile Memories | |
| Leon Abelmann1  Niels Tas1  Erwin Berenschot1  | |
| [1] MESA+ and IMPACT Research Institutes, University of Twente, PoBox 217, 7500 AE Enschede, The Netherlands; E-Mails: | |
| 关键词: data storage; self-assembly; ring core; MEMS; magnetic; | |
| DOI : 10.3390/mi1010001 | |
| 来源: mdpi | |
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【 摘 要 】
The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised associative network or into a cross-point architecture. When using principles requiring electrical connection, we show the need for transistor-based cross-talk isolation. Cross-talk can be avoided by reusing the coincident current magnetic ring core memory architecture invented in 1953. We demonstrate that self-assembly of three-dimensional ring core memories is in principle possible by combining corner lithography and anisotropic etching into single crystal silicon.
【 授权许可】
CC BY
© 2010 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| RO202003190055216ZK.pdf | 3219KB |
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