Materials | |
Crystal and Electronic Structures, Photoluminescence Properties of Eu2+-Doped Novel Oxynitride Ba4Si6O16-3x/2Nx | |
Yuanqiang Li2  Yuan Fang2  Naoto Hirosaki1  Rong-Jun Xie1  Lihong Liu1  Takashi Takeda1  | |
[1] Nitride Particle Group, Nano Ceramics Center, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan; E-Mails:;College of Materials Science and Engineering, Nanjing University of Technology, New Model Road 5, Nanjing, Jiangsu 210009, China; E-Mails: | |
关键词: barium silicon oxynitride; europium; crystal structure; electronic structure; luminescence properties; thermal quenching; | |
DOI : 10.3390/ma3031692 | |
来源: mdpi | |
【 摘 要 】
The crystal structure and the photoluminescence properties of novel green Ba4-yEuySi6O16-3x/2Nx phosphors were investigated. The electronic structures of the Ba4Si6O16 host were calculated by first principles pseudopotential method based on density functional theory. The results reveal that the top of the valence bands are dominated by O-2p states hybridized with Ba-6s and Si-3p states, while the conduction bands are mainly determined by Ba-6s states for the host, which is an insulator with a direct energy gap of 4.6 eV at Γ. A small amount of nitrogen can be incorporated into the host to replace oxygen and forms Ba4-yEuySi6O16-3x/2Nx solid solutions crystallized in a monoclinic (space group
【 授权许可】
CC BY
© 2010 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.
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