Carbon Nanotube Integration with a CMOS Process

Sensors

Maximiliano S. Perez²  Betiana Lerner²  Daniel E. Resasco¹  Pablo D. Pareja Obregon³  Pedro M. Julian³  Pablo S. Mandolesi³  Fabian A. Buffa⁴  Alfredo Boselli² 

[1] School of Chemical, Biological and Materials Engineering, University of Oklahoma, Norman, OK 73019, USA; E-Mail:;Grupo MEMS, Comision Nacional de Energia Atomica, San Martin 1650, Buenos Aires, Argentina; E-Mails:;Departamento de Ingenieria Electrica y de Computadoras, Universidad Nacional del Sur, Bahia Blanca B8000FTN, Argentina; E-Mails:;INTEMA Facultad de Ingenieria, Universidad Nacional de Mar del Plata, Mar del Plata B7608FDQ, Argentina; E-Mail:

关键词: carbon nanotube sensor;    CMOS integration;    microchip sensor;    SWCNT;   

DOI  :  10.3390/s100403857

来源: mdpi

【 摘 要 】

This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.

【 授权许可】

CC BY   
© 2010 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.