A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors

Sensors

Kow-Ming Chang²  Chih-Tien Chang¹  Kuo-Yi Chao² 

[1] Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan; E-Mail

关键词: drift;    ISFET;    pH-dependent;    ZrO₂;   

DOI  :  10.3390/s100504643

来源: mdpi

【 摘 要 】

A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the sequential measurements for both the n-channel and p-channel ISFETs, 75–100% pH-dependent drift could be successfully suppressed for the first seven hours. As a result, a nearly constant drift rate versus pH value was obtained, which increases the accuracy of pH measurements. Meanwhile, the drawback of the hyperbolic-like change with time of the common drift behavior for ISFETs was improved. A state-of-the-art integrated scheme adopting this method was also illustrated.

【 授权许可】

CC BY   
© 2010 by the authors; licensee MDPI, Basel, Switzerland.