Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range

Sensors

Takeji Ueda¹ 

[1] CREST, Japan Science and Technology Agency/5 Sambancho, Chiyoda-ku, Yokyo, 102-0075, Japan

关键词: terahertz detector;    far-infrared detector;    ultra-sensitive detector;    photon-counter;    single-photon detector;    charge-sensitive infrared phototransistor (CSIP);   

DOI  :  10.3390/s100908411

来源: mdpi

【 摘 要 】

We have developed novel single-photon detectors in the 10–50 μm wavelength region. The detectors are charge-sensitive infrared phototransistors (CSIPs) fabricated in GaAs/AlGaAs double quantum well (QW) structures, in which a photo-generated hole (+e) in the floating gate (upper QW) modulates the conductance of a capacitively-coupled channel located underneath (lower QW). The excellent noise equivalent power (NEP = 8.3 × 10⁻¹⁹ W/Hz^1/2) and specific detectivity (D^* = 8 × 10¹⁴ cm Hz^1/2/W) are demonstrated for 15 micron detection up to 23 K, which are by a few orders of magnitude better than those of other state-of-the-art high-sensitivity detectors. The dynamic range exceeds 10⁶ (∼aW to pW) by repeatedly resetting the accumulated holes in the upper QW. Simple device structure makes the detectors feasible for array fabrication: Furthermore, monolithic integration with reading circuits will be possible.

【 授权许可】

CC BY   
© 2010 by the authors; licensee MDPI, Basel, Switzerland.