Metal-Insulator-Semiconductor Photodetectors

Sensors

Chu-Hsuan Lin¹ 

[1] Institute of Opto-Electronic Engineering, National Dong Hwa University, Hualien 97401, Taiwan; E-Mail:

关键词: MIS;    metal-insulator-semiconductor;    photodetector;   

DOI  :  10.3390/s101008797

来源: mdpi

【 摘 要 】

The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

【 授权许可】

CC BY   
© 2010 by the authors; licensee MDPI, Basel, Switzerland.