Mn-doped Ge and Si: A Review of the Experimental Status

Materials

Shengqiang Zhou¹ 

[1] Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany; E-Mail:

关键词: diluted ferromagnetic semiconductor;   

DOI  :  10.3390/ma3125054

来源: mdpi

【 摘 要 】

Diluted ferromagnetic semiconductors (FMS) are in the focus of intense research due to their potential applications in spintronics and their striking new physical properties. So far Mn-doped III-V compound semiconductors such as GaMnAs are the most important and best understood ones, but they are ferromagnetic only at well below room temperature. An interesting alternative could be magnetic semiconductors based on elemental semiconductors, also owing to their compatibility with Si microelectronics. In the last decades, considerable amount of work has been devoted to fabricate Mn-doped Ge and Si FMS. In this article, the structural, magnetic and magneto-transport properties of Mn-doped Ge and Si will be reviewed.

【 授权许可】

CC BY   
© 2010 by the authors; licensee MDPI, Basel, Switzerland.