Sensors | |
Hall Sensors for Extreme Temperatures | |
Jakub Jankowski1  Semir El-Ahmar1  | |
[1] Institute of Physics, Poznan University of Technology, Nieszawska 13a, 61-965 Poznan, Poland; | |
关键词: Hall sensors; n-InSb/GaAs; extreme temperatures; magnetic sensors; | |
DOI : 10.3390/s110100876 | |
来源: mdpi | |
【 摘 要 】
We report on the preparation of the first complete extreme temperature Hall sensor. This means that the extreme-temperature magnetic sensitive semiconductor structure is built-in an extreme-temperature package especially designed for that purpose. The working temperature range of the sensor extends from −270 °C to +300 °C. The extreme-temperature Hall-sensor active element is a heavily n-doped InSb layer epitaxially grown on GaAs. The magnetic sensitivity of the sensor is
【 授权许可】
CC BY
© 2011 by the authors; licensee MDPI, Basel, Switzerland.
【 预 览 】
Files | Size | Format | View |
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RO202003190051110ZK.pdf | 426KB | download |