Investigation of a Photoelectrochemical Passivated ZnO-Based Glucose Biosensor

Sensors

Ching-Ting Lee²  Ying-Shuo Chiu²  Shu-Ching Ho¹ 

[1] Microsystems Technology Center, Industrial Technology Research Institute, Tainan, Taiwan; E-Mails:;Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 701, Tainan, Taiwan; E-Mail:

关键词: extended-gate field-effect-transistors;    photoelectrochemical method;    vapor cooling condensation technique;    ZnO-based glucose biosensors;    ZnO nanorods;   

DOI  :  10.3390/s110504648

来源: mdpi

【 摘 要 】

A vapor cooling condensation system was used to deposit high quality intrinsic ZnO thin films and intrinsic ZnO nanorods as the sensing membrane of extended-gate field-effect-transistor (EGFET) glucose biosensors. The sensing sensitivity of the resulting glucose biosensors operated in the linear range was 13.4 μA mM⁻¹ cm⁻². To improve the sensing sensitivity of the ZnO-based glucose biosensors, the photoelectrochemical method was utilized to passivate the sidewall surfaces of the ZnO nanorods. The sensing sensitivity of the ZnO-based glucose biosensors with passivated ZnO nanorods was significantly improved to 20.33 μA mM⁻¹ cm⁻² under the same measurement conditions. The experimental results verified that the sensing sensitivity improvement was the result of the mitigation of the Fermi level pinning effect caused by the dangling bonds and the surface states induced on the sidewall surface of the ZnO nanorods.

【 授权许可】

CC BY   
© 2011 by the authors; licensee MDPI, Basel, Switzerland.