New Analysis and Design of a RF Rectifier for RFID and Implantable Devices

Sensors

Dong-Sheng Liu¹  Feng-Bo Li¹  Xue-Cheng Zou¹  Yao Liu¹  Xue-Mei Hui¹ 

[1] Department of Electronic Science & Technology, Huazhong University of Science & Technology, Wuhan, 430074, China;

关键词: radio frequency identification;    passive transponders;    diode-connected MOS transistor;    rectifier;    power conversion efficiency;   

DOI  :  10.3390/s110706494

来源: mdpi

【 摘 要 】

New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from −15 dBm to −4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitableto passive UHF RFID tag IC and implantable devices.

【 授权许可】

CC BY   
© 2011 by the authors; licensee MDPI, Basel, Switzerland.