Defects Identification and Effects of Annealing on Lu2(1-x)Y2xSiO5 (LYSO) Single Crystals for Scintillation Application

Materials

Samuel Blahuta¹  Aurélie Bessière¹  Bruno Viana¹  Vladimir Ouspenski²  Eric Mattmann²  Julien Lejay¹ 

[1] Ecole Nationale Supérieure de Chimie de Paris (Chimie ParisTech) et Université Pierre et Marie Curie, Laboratoire de Chimie de la Matière Condensée de Paris, UMR–CNRS 7574, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France; E-Mails:;Saint-Gobain Cristaux et Détecteurs, 104 Route de Larchant, 77140 St-Pierre-lès-Nemours, France; E-Mails:

关键词: scintillator;    electronic defects;    thermoluminescence;    annealing treatments;   

DOI  :  10.3390/ma4071224

来源: mdpi

【 摘 要 】

The nature, properties and relative concentrations of electronic defects were investigated by Thermoluminescence (TL) in Lu_2(1-x)Y_2xSiO₅ (LYSO) single crystals. Ce and Tb-doped single crystals, grown by the Czochralski technique (CZ), revealed similar traps in TL. LYSO:Ce single crystals were grown by the Floating-Zone technique (FZ) with increasing oxygen concentration in the growth atmosphere. TL intensity is strongly dependent on the oxygen content of the material, and oxygen vacancies are proven to be the main electronic defects in LYSO. The effects of oxidizing and reducing annealing post-treatment on these defects were investigated. While oxidizing treatments efficiently reduce the amount of electronic defects, reducing treatments increase the amount of existing traps. In a thermally assisted tunneling mechanism, the localization of oxygen vacancies around the dopant is discussed. They are shown to be in the close vicinity of the dopant, though not in first neighbor positions.

【 授权许可】

CC BY   
© 2011 by the authors; licensee MDPI, Basel, Switzerland.