Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

Materials

Yunbo Shi¹  Hao Guo¹  Haiqiao Ni²  Chenyang Xue¹  Zhichuan Niu²  Jun Tang¹  Jun Liu¹  Wendong Zhang²  Jifang He²  Mifeng Li² 

[1] Key Laboratory of Instrumentation Science & Dynamic Measurement Ministry of Education, Taiyuan, Shanxi 030051, China; E-Mails:;State Key Laboratory for Superlattices and Microstructures, Institute of semiconductors, Chinese Academy of Sciences, Beijing 100083, China; E-Mails:

关键词: residual stress;    GaAs-on-Si;    MEMS sensors;   

DOI  :  10.3390/ma5122917

来源: mdpi

【 摘 要 】

Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlattice were used, and the surface defect density can be improved by two orders of magnitude. Combing with the Raman spectrum, the residual stress was characterized, and it can be concluded from the experimental results that the residual stress can be reduced by 50%, in comparison with the original substrate. This method gives us a solution to optimize the epitaxy GaAs layers on Si substrate, which will also optimize our future process of integration RTD and HEMT based on GaAs on Si substrate for the MEMS sensor applications.

【 授权许可】

CC BY   
© 2012 by the authors; licensee MDPI, Basel, Switzerland.